MT45W2MW16BABB-706 WT TR

2 Meg x 16, 1 Meg x 16 Async/Page/Burst CellularRAM 1.0 Memory Features Async/Page/Burst CellularRAM™ 1.0 Memory MT45W2MW16BA MT45W1MW16BA* *Note: Please contact the factory for all new 16Mb designs. For the latest data sheet, refer to Micron’s Web site: http://www.micron.com/products/psram/cellularram/ Features Figure 1: • Single device supports asynchronous, page, and burst operations • Random access time: 70ns, 85ns • VCC, VCCQ voltages 1.70V–1.95V VCC 1.70V–3.30V VCCQ • Page mode read access Sixteen-word page size Interpage read access: 70ns Intrapage read access: 20ns • Burst mode write access Continuous burst • Burst mode read access 4, 8, or 16 words, or continuous burst MAX clock rate: 80 MHz (tCLK = 12.5ns) Burst initial latency: 50ns (4 clocks) @ 80 MHz t ACLK: 9ns @ 80 MHz • Low power consumption Asynchronous READ: